The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 08, 2013
Filed:
Jun. 14, 2010
Hironori Araki, Milpitas, CA (US);
Yoshitaka Sasaki, Milpitas, CA (US);
Hiroyuki Ito, Milpitas, CA (US);
Shigeki Tanemura, Milpitas, CA (US);
Kazuo Ishizaki, Milpitas, CA (US);
Takehiro Horinaka, Milpitas, CA (US);
Hironori Araki, Milpitas, CA (US);
Yoshitaka Sasaki, Milpitas, CA (US);
Hiroyuki Ito, Milpitas, CA (US);
Shigeki Tanemura, Milpitas, CA (US);
Kazuo Ishizaki, Milpitas, CA (US);
Takehiro Horinaka, Milpitas, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
A near-field light generator includes: a waveguide; a clad layer having a penetrating opening and disposed on the waveguide; a plasmon generator accommodated in the opening; and a dielectric film interposed between the plasmon generator and each of the waveguide and the clad layer. In a method of manufacturing the near-field light generator, an initial clad layer is initially formed on the waveguide, and then the initial clad layer is taper-etched by RIE to form a recess that does not reach the top surface of the waveguide. Subsequently, the recess is etched by wet etching until the top surface of the waveguide is exposed in part. Next, the dielectric film is formed in the opening, and the plasmon generator is formed on the dielectric film.