The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 08, 2013

Filed:

Jul. 01, 2010
Applicants:

Horacio D. Espinosa, Winnetka, IL (US);

Nicolaie A. Moldovan, Glenview, IL (US);

Inventors:

Horacio D. Espinosa, Winnetka, IL (US);

Nicolaie A. Moldovan, Glenview, IL (US);

Assignee:

Northwestern University, Evanston, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01L 3/02 (2006.01); G01Q 60/54 (2010.01);
U.S. Cl.
CPC ...
Abstract

A method of forming a microchannel as well as a thin film structure including same is made by forming a first thin film on a side of a substrate, forming a fugitive second thin film on the first thin film such that the second thin film defines a precursor of the elongated microchannel and a plurality of extensions connected to and extending transversely relative to the precursor along a length thereof A third thin film is formed on the first thin film and the fugitive second thin film such that the second thin film resides between the first thin film and the third thin film. A respective access site is formed in a region of the third thin film residing on a respective extension and penetrating to the fugitive second thin film. The fugitive second thin film forming the precursor is selectively removed from between the first thin film and the third thin film using an etching medium introduced through the access sites, thereby forming the microchannel between the first thin film and the third thin film. The method preferably further includes forming a sealing layer on the third thin film in a manner to close off open access sites remaining after selective removal of the second thin film.


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