The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Aug. 20, 2010
Dong-ku Kang, Yongin-si, KR;
Hyeong-jun Kim, Anyang-si, KR;
Dong-Ku Kang, Yongin-si, KR;
Hyeong-Jun Kim, Anyang-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of programming a non-volatile memory including N-bit multi-level cell (MLC) memory includes executing an incremental step pulse programming (ISPP) operation on the MLC memory cells, where the ISPP operation includes a programming sequence of first through Npage programming operations, where N is an integer of 2 or more. The programming sequence further includes an erase programming that is executed after the (N−1)page programming operation and before the Npage programming operation, where the erase page programming increases a threshold voltage distribution of erase cells among the MLC memory cells.