The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Mar. 11, 2008
Hyun-chul Song, Seoul, KR;
Seong-deok Lee, Suwon-si, KR;
Won-hee Choe, Gyeongju-si, KR;
Jae-hyun Kwon, Yongin-si, KR;
Kang-eui Lee, Yongin-si, KR;
Hyun-chul Song, Seoul, KR;
Seong-deok Lee, Suwon-si, KR;
Won-hee Choe, Gyeongju-si, KR;
Jae-hyun Kwon, Yongin-si, KR;
Kang-eui Lee, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Samsung Electro-Mechanics Co., Ltd., Suwon, KR;
Abstract
A CMOS (Complementary Metal-Oxide Semiconductor) image sensor is provided. A CMOS image sensor includes a first light-receiving unit converting light into charge, a first floating diffusion region, in which a first potential corresponding to the converted amount of charge is generated and a second floating diffusion region, to which the charge in the first floating diffusion region is transmitted, and in which a second potential is generated, wherein a wide dynamic range signal is acquired from the first floating diffusion region, a high-sensitively signal is acquired from the second floating diffusion region, and the acquired signals are synthesized and output.