The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Apr. 13, 2010
Joseph T. Smith, Columbia, MD (US);
Bron R. Frias, Catonsville, MD (US);
Paul A. Tittel, Columbia, MD (US);
Robert R. Shiskowski, Eldersburg, MD (US);
Nathan Bluzer, Rockville, MD (US);
Joseph T. Smith, Columbia, MD (US);
Bron R. Frias, Catonsville, MD (US);
Paul A. Tittel, Columbia, MD (US);
Robert R. Shiskowski, Eldersburg, MD (US);
Nathan Bluzer, Rockville, MD (US);
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Abstract
An Indium Tin Oxide (ITO) gate charge coupled device (CCD) is provided. The CCD device comprises a CCD structure having a substrate layer, an oxide layer over the substrate layer, a nitride layer over the oxide layer and a plurality of parallel ITO gates extending over the nitride layer. The CCD device further comprises a plurality of substantially similarly sized channel stop regions in the substrate layer that extend transversely relative to the ITO gates, such that a given pair of channel stop regions defining a pixel column of the CCD structure. The CCD device also comprises a plurality of vent openings that extend through the nitride layer along the plurality of substantially similarly sized channel stop regions to allow for penetration of hydrogen to at least one of the oxide layer and the substrate layer.