The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 01, 2013

Filed:

Jun. 02, 2011
Applicants:

Tomoaki Uno, Kanagawa, JP;

Masaki Shiraishi, Kanagawa, JP;

Nobuyoshi Matsuura, Kanagawa, JP;

Yukihiro Satou, Kanagawa, JP;

Inventors:

Tomoaki Uno, Kanagawa, JP;

Masaki Shiraishi, Kanagawa, JP;

Nobuyoshi Matsuura, Kanagawa, JP;

Yukihiro Satou, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention enhances voltage conversion efficiency of a semiconductor device. In a non-isolated DC-DC converter that includes a high-side switch power MOSFET and a low-side switch power MOSFET, which are series-connected, the high-side switch power MOSFET and driver circuits for driving the high-side and low-side switch power MOSFETs are formed within one semiconductor chip, whereas the low-side switch power MOSFET is formed in another semiconductor chip. The two semiconductor chips are sealed in a single package.


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