The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Oct. 14, 2008
Applicant:
Markus Gerhard Andreas Muller, Brussels, BE;
Inventor:
Markus Gerhard Andreas Muller, Brussels, BE;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a localized SOI structure in a substrate () wherein a trench () is formed in the substrate, and a dielectric layer () is formed on the base of the trench (). The trench is filled with semiconductor material () by means of epitaxial growth.