The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Feb. 03, 2010
Yoshiyuki Kawashima, Tokyo, JP;
Keiichi Haraguchi, Tokyo, JP;
Yoshiyuki Kawashima, Tokyo, JP;
Keiichi Haraguchi, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
To provide a technique capable of improving reliability of a semiconductor device having a nonvolatile memory cell by suppressing the reduction of the drive force. A memory cell is configured by a selection pMIS having a selection gate electrode including a conductive film exhibiting a p-type conductivity and a memory pMIS having a memory gate electrode including a conductive film exhibiting a p-type conductivity, and at the time of write, hot electrons are injected into a charge storage layer from the side of a semiconductor substrateand at the time of erase, hot holes are injected into the charge storage layer from the memory gate electrode.