The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Dec. 22, 2010
Applicants:
Naoki Kotani, Toyama, JP;
Tokuhiko Tamaki, Osaka, JP;
Inventors:
Naoki Kotani, Toyama, JP;
Tokuhiko Tamaki, Osaka, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/10 (2006.01); H01L 21/335 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a plurality of first cells having a first cell height, and a plurality of second cells having a second cell height. Each of the first cells has a first MIS transistor of a first conductivity type, and a substrate contact region of a second conductivity type. Each of the second cells has a second MIS transistor of the first conductivity type, a power supply region of the first conductivity type, and a first extended region of the first conductivity type that is silicidated at a surface thereof. The first cell height is greater than the second cell height.