The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Jul. 24, 2009
Applicant:
Jose Jimenez, Dallas, TX (US);
Inventor:
Jose Jimenez, Dallas, TX (US);
Assignee:
TriQuint Semiconductor, Inc., Hillsboro, OR (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
Embodiments include but are not limited to apparatuses and systems including a heterostructure having a first barrier layer, a gallium nitride channel layer on the first barrier layer, and a second barrier layer on the gallium nitride channel layer and including a first sublayer, a second sublayer, and a third sublayer. The first barrier layer, the first sublayer, and the third sublayer may each include aluminum. Other embodiments may be described and claimed.
Jimenez, Jose. (2013). Enhancement-mode gallium nitride high electron mobility transistor (U.S. Patent No. 8344420). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8344420
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile