The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Sep. 15, 2009
Vladislav Vashchenko, Palo Alto, CA (US);
Peter J. Hopper, San Jose, CA (US);
Philipp Lindorfer, San Jose, CA (US);
Vladislav Vashchenko, Palo Alto, CA (US);
Peter J. Hopper, San Jose, CA (US);
Philipp Lindorfer, San Jose, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
A circuit includes multiple doped regions in a substrate. A first of the doped regions has a tip proximate to a second of the doped regions and is separated from the second doped region by an intrinsic region to form a P-I-N structure. The circuit also includes first and second electrodes electrically coupled to the first and second doped regions, respectively. The electrodes are configured to supply voltages to the first and second doped regions to reverse bias the P-I-N structure and generate light. The first doped region could include multiple tips, the second doped region could include multiple tips, and each tip of the first doped region could be proximate to one of the tips of the second doped region to form multiple P-I-N structures. The P-I-N structure could also be configured to operate in double avalanche injection conductivity mode with internal positive feedback.