The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Jun. 26, 2009
Junichi Hanna, Mitaka, JP;
Isao Suzumura, Tokyo, JP;
Mieko Matsumura, Kokubunji, JP;
Mutsuko Hatano, Kokubunji, JP;
Kenichi Onisawa, Hitachinaka, JP;
Masatoshi Wakagi, Hitachinaka, JP;
Etsuko Nishimura, Hitachiota, JP;
Akiko Kagatsume, Tsukuba, JP;
Junichi Hanna, Mitaka, JP;
Isao Suzumura, Tokyo, JP;
Mieko Matsumura, Kokubunji, JP;
Mutsuko Hatano, Kokubunji, JP;
Kenichi Onisawa, Hitachinaka, JP;
Masatoshi Wakagi, Hitachinaka, JP;
Etsuko Nishimura, Hitachiota, JP;
Akiko Kagatsume, Tsukuba, JP;
Hitachi, Ltd., Tokyo, JP;
Tokyo Institute of Technology, Tokyo, JP;
Abstract
Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.