The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Aug. 18, 2010
Kang Dae Kim, Daejeon, KR;
In-kyu You, Daejeon, KR;
Jae Bon Koo, Daejeon, KR;
Yong Suk Yang, Daejeon, KR;
Seung Youl Kang, Daejeon, KR;
Kang Dae Kim, Daejeon, KR;
In-Kyu You, Daejeon, KR;
Jae Bon Koo, Daejeon, KR;
Yong Suk Yang, Daejeon, KR;
Seung Youl Kang, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided are an organic thin film transistor and a method of forming the same. The method comprises forming a gate electrode on a substrate, forming a gate dielectric, which covers the gate electrode and includes a recess region at an upper portion, on the substrate, forming a source electrode and a drain electrode in the recess region, and forming an organic semiconductor layer between the source electrode and the drain electrode in the recess region.