The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Sep. 01, 2009
Atsuhiro Kinoshita, Kanagawa, JP;
Junji Koga, Kanagawa, JP;
Atsuhiro Kinoshita, Kanagawa, JP;
Junji Koga, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device which can effectively suppress a short channel effect and junction leakage is provided. A semiconductor device includes a field effect transistor. The field effect transistor includes a first semiconductor region of a first conductivity type, a gate electrode formed on a gate insulating film, and source and drain electrodes. The field effect transistor also includes second semiconductor regions of a second conductivity type. The field effect transistor further includes third semiconductor regions of the second conductivity type having an impurity concentration higher than that of the second semiconductor region and formed between the source electrode and the first and second semiconductor regions and between the drain electrode and the first and second semiconductor regions, and side wall insulating films formed on both the side surfaces of the gate electrode. The source electrode and the drain electrode are separated from the side wall insulating films.