The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Jan. 25, 2012
Jee Hwan Kim, White Plains, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Siegfried Maurer, Stormville, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Jee Hwan Kim, White Plains, NY (US);
Stephen W. Bedell, Wappingers Falls, NY (US);
Siegfried Maurer, Stormville, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for generating n-type carriers in a semiconductor is disclosed. The method includes supplying a semiconductor having an atomic radius. Implanting an n-type dopant species into the semiconductor, which n-type dopant species has a dopant atomic radius. Implanting a compensating species into the semiconductor, which compensating species has a compensating atomic radius. Selecting the n-type dopant species and the compensating species in such manner that the size of the semiconductor atomic radius is inbetween the dopant atomic radius and the compensating atomic radius. A further method is disclosed for generating n-type carriers in germanium (Ge). The method includes setting a target concentration for the carriers, implanting a dose of an n-type dopant species into the Ge, and selecting the dose to correspond to a fraction of the target carrier concentration. Thermal annealing the Ge in such manner as to activate the n-type dopant species and to repair a least a portion of the implantation damage. Repeating the implantation and the thermal annealing until the target n-type carrier concentration has been reached.