The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Oct. 01, 2009
Tae-hyoung Koo, Incheon, KR;
Sam-jong Choi, Suwon-si, KR;
Yeonsook Kim, Yongin-si, KR;
Taesung Kim, Suwon-si, KR;
Heesung Kim, Yongin-si, KR;
Kyoochul Cho, Yongin-si, KR;
Joonyoung Choi, Suwon-si, KR;
Tae-Hyoung Koo, Incheon, KR;
Sam-jong Choi, Suwon-si, KR;
Yeonsook Kim, Yongin-si, KR;
Taesung Kim, Suwon-si, KR;
Heesung Kim, Yongin-si, KR;
KyooChul Cho, Yongin-si, KR;
Joonyoung Choi, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of processing a semiconductor wafer includes preheating the wafer to a preheating temperature that is less than a peak temperature, heating the wafer from the preheating temperature to the peak temperature at a first ramp rate that averages about 100° C. per second or more, and, immediately after heating the wafer from the preheating temperature to the peak temperature, cooling the wafer at a second ramp rate that averages about −70° C. per second or more from the peak temperature to the preheating temperature, wherein the peak temperature is about 1,100° C. or more.