The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Mar. 25, 2011
Wandon Kim, Yongin-si, KR;
Jong Cheol Lee, Seoul, KR;
Jin Yong Kim, Seoul, KR;
Beom Seok Kim, Suwon-si, KR;
Yong-suk Tak, Seoul, KR;
Kyuho Cho, Hwaseong-si, KR;
Ohseong Kwon, Hwaseong-si, KR;
Wandon Kim, Yongin-si, KR;
Jong Cheol Lee, Seoul, KR;
Jin Yong Kim, Seoul, KR;
Beom Seok Kim, Suwon-si, KR;
Yong-Suk Tak, Seoul, KR;
Kyuho Cho, Hwaseong-si, KR;
Ohseong Kwon, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of manufacturing a capacitor of a semiconductor device includes forming a high-k dielectric pattern on a semiconductor substrate, the high-k dielectric pattern having a pillar shape including a hole therein, forming a lower electrode in the hole of the high-k dielectric pattern, locally forming a blocking insulating pattern on an upper surface of the lower electrode, and forming an upper electrode covering the high-k dielectric pattern and the blocking insulating pattern.