The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Jun. 15, 2010
Applicants:
Kenichi Umeda, Kanagawa, JP;
Masayuki Suzuki, Kanagawa, JP;
Atsushi Tanaka, Kanagawa, JP;
Yuki Nara, Kanagawa, JP;
Inventors:
Kenichi Umeda, Kanagawa, JP;
Masayuki Suzuki, Kanagawa, JP;
Atsushi Tanaka, Kanagawa, JP;
Yuki Nara, Kanagawa, JP;
Assignee:
FUJIFILM Corporation, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/16 (2006.01); H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention provides a thin film transistor comprising an active layer, the active layer comprising an IGZO-based oxide material, the IGZO-based oxide material being represented by a composition formula of InGaZnO, where 0.75<x<1.10 and 0<δ≦1.29161×exp(−x/0.11802)+0.00153 and being formed from a single phase of IGZO having a crystal structure of YbFeO, and a method of producing the thin film transistor.