The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Oct. 27, 2008
Daniel N. Carothers, Oro Valley, AZ (US);
Craig M. Hill, Warrenton, VA (US);
Andrew T. S. Pomerene, Leesburg, VA (US);
VU A. VU, Falls Church, VA (US);
Robert Kamocsai, Manassas, VA (US);
Timothy J. Conway, Gainesville, VA (US);
Daniel N. Carothers, Oro Valley, AZ (US);
Craig M. Hill, Warrenton, VA (US);
Andrew T. S. Pomerene, Leesburg, VA (US);
Vu A. Vu, Falls Church, VA (US);
Robert Kamocsai, Manassas, VA (US);
Timothy J. Conway, Gainesville, VA (US);
BAE Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);
Abstract
An improved method for manufacturing a lateral germanium detector is disclosed. A detector window is opened through an oxide layer to expose a doped single crystalline silicon layer situated on a substrate. Next, a single crystal germanium layer is grown within the detector window, and an amorphous germanium layer is grown on the oxide layer. The amorphous germanium layer is then polished to leave only a small portion around the single crystal germanium layer. A dielectric layer is deposited on the amorphous germanium layer and the single crystal germanium layer. Using resist masks and ion implants, multiple doped regions are formed on the single crystal germanium layer. After opening several oxide windows on the dielectric layer, a refractory metal layer is deposited on the doped regions to form multiple germanide layers.