The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2012

Filed:

Apr. 16, 2009
Applicants:

Pim T. Tuyls, Eindhoven, NL;

Geert J. Schrijen, Eindhoven, NL;

Abraham C. Kruseman, Eindhoven, NL;

Inventors:

Pim T. Tuyls, Eindhoven, NL;

Geert J. Schrijen, Eindhoven, NL;

Abraham C. Kruseman, Eindhoven, NL;

Assignees:

Intrinsic ID B.V., Eindhoven, NL;

NXP B.V., Eindhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for alleviating burn-in effect and enabling performing a start-up process in respect of a device comprising a plurality of challengeable memory elements, wherein the memory elements are able to, upon start-up, generate a response pattern of start-up values useful for identification as the response pattern depends on physical characteristics of the memory elements, the method comprising the step of, after start-up of the memory elements, writing a data pattern to the memory elements which is inverse to a response pattern that was previously read from the same memory elements. Thus, degradation of the PMOS transistors due to NBTI can be alleviated.


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