The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Jun. 30, 2008
Masanori Hosomi, Kanagawa, JP;
Hiroyuki Ohmori, Kanagawa, JP;
Minoru Ikarashi, Kanagawa, JP;
Tetsuya Yamamoto, Kanagawa, JP;
Yutaka Higo, Kanagawa, JP;
Kazutaka Yamane, Kanagawa, JP;
Yuki Oishi, Kanagawa, JP;
Hiroshi Kano, Kanagawa, JP;
Masanori Hosomi, Kanagawa, JP;
Hiroyuki Ohmori, Kanagawa, JP;
Minoru Ikarashi, Kanagawa, JP;
Tetsuya Yamamoto, Kanagawa, JP;
Yutaka Higo, Kanagawa, JP;
Kazutaka Yamane, Kanagawa, JP;
Yuki Oishi, Kanagawa, JP;
Hiroshi Kano, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A memory is provided that is capable of improving the thermal stability without increasing the write current. The memory is configured to include: a storage element which has a storage layer that holds information according to a magnetization state of a magnetic substance and in which a magnetization fixed layer is provided on the storage layer with an intermediate layerinterposed therebetween, the intermediate layer is formed of an insulator, the direction of magnetization of the storage layer is changed by injecting electrons spin-polarized in a lamination direction such that the information is recorded in the storage layer, and distortion is applied to the storage layer from an insulating layer which exists around the storage layer and has a smaller coefficient of thermal expansion than the storage layer. A wiring line for supplying a current flowing in the lamination direction of the storage element.