The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
May. 01, 2008
Mingjiao Liu, Gilbert, AZ (US);
Ali Salih, Mesa, AZ (US);
Emmanuel Saucedo-flores, Jalisco CP, MX;
Suem Ping Loo, Tolleson, AZ (US);
Mingjiao Liu, Gilbert, AZ (US);
Ali Salih, Mesa, AZ (US);
Emmanuel Saucedo-Flores, Jalisco CP, MX;
Suem Ping Loo, Tolleson, AZ (US);
Semiconductor Components Industries, LLC, Phoenix, AZ (US);
Abstract
A transient voltage suppressor and a method for protecting against surge and electrostatic discharge events. A semiconductor substrate of a first conductivity type has gate and anode regions of a second conductivity type formed therein. A PN junction diode is formed from a portion of the gate region and the semiconductor substrate. A cathode is formed adjacent to another portion of the gate region. A thyristor is formed from the cathode, the gate region, the substrate, and the anode region. Zener diodes are formed from other portions of the gate region and the semiconductor substrate. A second Zener diode has a breakdown voltage that is greater than a breakdown voltage of a first Zener diode and that is greater than a breakover voltage of the thyristor. The first Zener diode protects against a surge event and the second Zener diode protects against an electrostatic discharge event.