The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2012

Filed:

Dec. 02, 2010
Applicants:

Kwok-fu Chiu, San Jose, CA (US);

Yih-chyi Chong, Santa Clara, CA (US);

Michael E. Haslam, Arlington, TX (US);

Inventors:

Kwok-Fu Chiu, San Jose, CA (US);

Yih-Chyi Chong, Santa Clara, CA (US);

Michael E. Haslam, Arlington, TX (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01);
U.S. Cl.
CPC ...
Abstract

Matched bipolar transistor pairs for use in differential transistor pair circuitry, current mirror transistor pair circuitry and voltage reference transistor pair circuitry are disclosed. Each transistor in the pair includes a base, emitter and a collector region and a doped polysilicon emitter contact, a metal emitter contact and an metal emitter interconnect which makes an electrical connection to the emitter region by way of the metal emitter contact and the polysilicon emitter contact. The metal emitter interconnect is displaced latterly away from the emitter region so that no part of the metal emitter interconnect overlies any portion of the emitter region.


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