The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Mar. 08, 2011
Hoi Sing Kwok, Hong Kong, CN;
Man Wong, Hong Kong, CN;
Zhiguo Meng, Hong Kong, CN;
Jiaxin Sun, Hong Kong, CN;
Xiuling Zhu, Hong Kong, CN;
Hoi Sing Kwok, Hong Kong, CN;
Man Wong, Hong Kong, CN;
Zhiguo Meng, Hong Kong, CN;
Jiaxin Sun, Hong Kong, CN;
Xiuling Zhu, Hong Kong, CN;
The Hong Kong University of Science and Technology, Hong Kong, CN;
Abstract
Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.