The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2012

Filed:

Sep. 07, 2010
Applicant:

Hiroyuki Maeda, Kanagawa-ken, JP;

Inventor:

Hiroyuki Maeda, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
Abstract

According to one embodiment, a semiconductor device includes a substrate, a foundation layer, a lower layer side stacked body, an upper layer side stacked body, an inter-layer insulating layer, and a plurality of contact electrodes. The foundation layer is provided in the second contact region to form a difference in levels between the second contact region and the first contact region. The lower layer side stacked body includes a plurality of conductive layers stacked alternately with a plurality of insulating layers. An upper level portion of the lower layer side stacked body stacked on the foundation layer is patterned into a stairstep configuration. The upper layer side stacked body is provided on a lower level portion of the lower layer side stacked body stacked in the first contact region. The upper layer side stacked body includes a plurality of conductive layers stacked alternately with a plurality of insulating layers.


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