The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Sep. 03, 2010
Risako Ueno, Tokyo, JP;
Kazuhiro Suzuki, Tokyo, JP;
Hideyuki Funaki, Tokyo, JP;
Yoshinori Iida, Tokyo, JP;
Tatsuo Shimizu, Tokyo, JP;
Masamichi Suzuki, Tokyo, JP;
Risako Ueno, Tokyo, JP;
Kazuhiro Suzuki, Tokyo, JP;
Hideyuki Funaki, Tokyo, JP;
Yoshinori Iida, Tokyo, JP;
Tatsuo Shimizu, Tokyo, JP;
Masamichi Suzuki, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Certain embodiments provide a solid-state imaging device including: a photoelectric converting unit that includes a semiconductor layer of a second conductivity type provided on a semiconductor substrate of a first conductivity type, converts incident light entering a first surface of the semiconductor substrate into signal charges, and stores the signal charges; a readout circuit that reads the signal charges stored by the photoelectric converting unit; an antireflection structure that is provided on the first surface of the semiconductor substrate to cover the semiconductor layer of the photoelectric converting unit, includes a fixed charge film that retains fixed charges being non-signal charges, and prevents reflection of the incident light; and a hole storage region that is provided between the photoelectric converting unit and the antireflection structure, and stores holes being non-signal charges.