The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Sep. 19, 2011
Mitsuharu Tai, Kokubunji, JP;
Hideo Sato, Hitachi, JP;
Mutsuko Hatano, Kokubunji, JP;
Masayoshi Kinoshita, Hachioji, JP;
Mitsuharu Tai, Kokubunji, JP;
Hideo Sato, Hitachi, JP;
Mutsuko Hatano, Kokubunji, JP;
Masayoshi Kinoshita, Hachioji, JP;
Hitachi Displays, Ltd., Chiba-ken, JP;
Panasonic Liquid Crystal Display Co., Ltd., Hyogo-ken, JP;
Abstract
According to the present invention, a highly sensitive photo-sensing element and a sensor driver circuit are prepared by planer process on an insulating substrate by using only polycrystalline material. Both the photo-sensing element and the sensor driver circuit are made of polycrystalline silicon film. As the photo-sensing element, a photo transistor is formed by using TFT, which comprises a first electrodeprepared on an insulating substrate, a photoelectric conversion regionand a second electrode, and a third electrodedisposed above the photoelectric conversion region. An impurity layer positioned closer to an intrinsic layer (density of active impurities is 10cmor lower) is provided on the regionsandon both sides under the third electrodeor on one of the regionsoron one side.