The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Nov. 30, 2011
Hisao Kawasaki, Kanagawa-ken, JP;
Hisao Kawasaki, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
An undoped AlGaN layeris formed on a buffer layer composed of a GaN series material formed on a semiconductor substrate, a drain electrodeand a source electrodeforming ohmic junction with the undoped AlGaN layerare formed separately from each other on the undoped AlGaN layer. A gate electrodecomposed of metal Ni and Au laminated in this order is formed between the drain electrodesand the source electrodeon the undoped AlGaN layer. The end portion-of the gate electrodeis formed on the underlying metalformed by a metal containing Ti via an insulating filmon a GaN buffer layersurrounding the undoped AlGaN layer
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile