The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Nov. 24, 2010
Applicants:
Fumio Yamada, Yokohama, JP;
Kazutaka Inoue, Yokohama, JP;
Inventors:
Fumio Yamada, Yokohama, JP;
Kazutaka Inoue, Yokohama, JP;
Assignee:
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/072 (2012.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a substrate on which a GaN channel layer, an AlGaN electron supply layer and a GaN cap layer are stacked in this order, a gate electrode formed on the GaN cap layer, and a source electrode and a drain electrode formed on the AlGaN electron supply layer so as to interpose the gate electrode. A first recess is formed in the GaN cap layer and being located between the gate electrode and the source electrode. A thickness of the GaN cap layer in a bottom of the first recess is less than that of the GaN cap layer located under the gate electrode.