The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Aug. 10, 2010
Hsin-chih Tai, San Jose, CA (US);
Howard E. Rhodes, San Martin, CA (US);
Wei Zheng, Los Gatos, CA (US);
Vincent Venezia, Los Gatos, CA (US);
Yin Qian, Milpitas, CA (US);
Duli Mao, Sunnyvale, CA (US);
Hsin-Chih Tai, San Jose, CA (US);
Howard E. Rhodes, San Martin, CA (US);
Wei Zheng, Los Gatos, CA (US);
Vincent Venezia, Los Gatos, CA (US);
Yin Qian, Milpitas, CA (US);
Duli Mao, Sunnyvale, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
A backside illuminated ('BSI') complementary metal-oxide semiconductor ('CMOS') image sensor includes a photosensitive region disposed within a semiconductor layer and a stress adjusting layer. The photosensitive region is sensitive to light incident on a backside of the BSI CMOS image sensor to collect an image charge. The stress adjusting layer is disposed on a backside of the semiconductor layer to establish a stress characteristic that encourages photo-generated charge carriers to migrate towards the photosensitive region.