The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Aug. 24, 2006
Akira Kiyama, Toyota, JP;
Rentaro Mori, Kasugai, JP;
Hiroya Inaoka, Toyota, JP;
Masayuki Ichiyanagi, Toyota, JP;
Nobuhiko Sawaki, Nagoya, JP;
Yoshio Honda, Nagoya, JP;
Yasuyuki Yanase, Gifu-ken, JP;
Akira Kiyama, Toyota, JP;
Rentaro Mori, Kasugai, JP;
Hiroya Inaoka, Toyota, JP;
Masayuki Ichiyanagi, Toyota, JP;
Nobuhiko Sawaki, Nagoya, JP;
Yoshio Honda, Nagoya, JP;
Yasuyuki Yanase, Gifu-ken, JP;
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Abstract
Light emitters and substrates for light emitters are provided to improve light-emitting efficiency and achieve improvement in crystal quality. A light emitter includes a single-crystal substrate, an oriented microcrystal layer, and a light-emitting layer. The light-emitting layer is made of a nitride semiconductor by means of a vapor-phase growth method. In the oriented microcrystal layer, the proportion of crystals, in which one of crystal axes is oriented with respect to the single-crystal substrate, is 5-9 out of 10 crystals. An average diameter of the crystal grains of the respective crystals, contained in the oriented microcrystal layer, is 1-1,000 nm. A light emitter may be equipped with an intermediate layer, a light-emitting layer, and a clad layer. These layers are formed on the oriented microcrystal layer by a vapor-phase growth method. The light-emitting layer contains microcrystal grains whose average grain diameter is 1-1,000 nm.