The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2012

Filed:

Aug. 26, 2011
Applicants:

Xi-cheng Zhang, Melrose, NY (US);

Pengyu Han, San Jose, CA (US);

Yuting W. Chen, Hyde Park, NY (US);

Inventors:

Xi-Cheng Zhang, Melrose, NY (US);

Pengyu Han, San Jose, CA (US);

Yuting W. Chen, Hyde Park, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 19/12 (2006.01); G02B 1/00 (2006.01); B23P 11/00 (2006.01); G02B 5/00 (2006.01); G01J 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A terahertz (THz) anti-reflection device, for example, a broadband tunable THz anti-reflection device, includes a silicon substrate having a plurality of recesses, each of the plurality of recesses having a plurality of cavities of decreasing dimension. The cavities may be nested polygonal cavities, for example, having a square or rectangular cross section. The recesses having the cavities may be positioned at regular periods, for example, periods ranging from 10 μm to 20 μm. The devices may be fabricated by conventional lithographic methods. Also disclosed are methods for modifying terahertz radiation and methods for fabricating anti-reflection devices.


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