The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2012

Filed:

Feb. 10, 2006
Applicants:

Mikio Murozono, Hirakata, JP;

Takeshi Hibino, Ikoma, JP;

Noboru Mouri, Katano, JP;

Young-tae Park, Higashiosaka, JP;

Toshiyuki Nakamura, Hirakata, JP;

Yoshiaki Kodani, Neyagawa, JP;

Inventors:

Mikio Murozono, Hirakata, JP;

Takeshi Hibino, Ikoma, JP;

Noboru Mouri, Katano, JP;

Young-tae Park, Higashiosaka, JP;

Toshiyuki Nakamura, Hirakata, JP;

Yoshiaki Kodani, Neyagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

This invention relates to a method for producing a photovoltaic device that includes spherical photovoltaic elements and a support with a large number of recesses for receiving the elements one by one and to the photovoltaic device. Each of the spherical photovoltaic elements comprises a spherical first semiconductor and a second semiconductor layer covering the surface of the first semiconductor. A conductive adhesive is applied in advance to the bottoms of the recesses of the support serving as a second conductor layer. The elements are disposed in the bottoms of the recesses with the conductive adhesive applied thereto, to fix the elements to the support and electrically connect their second semiconductor layers to the support. An electrical insulator layer, which has through-holes serving as conductive paths, is bonded to the backside of the support, and a first conductor layer, which interconnects the electrodes of the first semiconductors of the respective elements, is formed thereon.


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