The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Apr. 21, 2009
Guoyi Zhang, Beijing, CN;
Yongjian Sun, Beijing, CN;
Xiangning Kang, Beijing, CN;
Zhizhong Chen, Beijing, CN;
Zhijian Yang, Beijing, CN;
Xinrong Yang, Beijing, CN;
Guoyi Zhang, Beijing, CN;
Yongjian Sun, Beijing, CN;
Xiangning Kang, Beijing, CN;
Zhizhong Chen, Beijing, CN;
Zhijian Yang, Beijing, CN;
Xinrong Yang, Beijing, CN;
Sino Nitride Semiconductor Co, Ltd., Dongguan, Guangdong, CN;
Abstract
A method for nondestructive laser lift-off of GaN from sapphire substrates is disclosed. A solid-state laser is used as the laser source. A small laser-spot having a perimeter length of 3 to 1000 micrometers and a distance of two farthest corners or a longest diameter of no more than 400 micrometers is used for laser scanning point-by-point and line-by-line. The energy at the center of the laser-spot is the strongest and is gradually reduced toward the periphery. A nondestructive laser lift-off with a small laser-spot is achieved. The scanning mode of the laser lift-off is improved. Device lift-off can be achieved without the need of aiming. As a result, the laser lift-off process is simplified, and the efficiency is improved while the rejection rate is reduced. The obstacles of the industrialization of the laser lift-off process are removed.