The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Jun. 17, 2011
Applicant:
Yasunori Morinaga, Toyama, JP;
Inventor:
Yasunori Morinaga, Toyama, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device includes: (a) forming an interlayer insulating film on a substrate; (b) forming an interconnect in the interlayer insulating film; (c) applying an organic solution to an upper surface of the interconnect and an upper surface of the interlayer insulating film; (d) after (c), applying a silylating solution to the upper surface of the interconnect and the upper surface of the interlayer insulating film; (e) after (d), heating the substrate; and (f) forming a first liner insulating film at least on the upper surface of the interconnect.