The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2012

Filed:

Mar. 17, 2011
Applicants:

Mathew Joseph Zablocki, Newark, DE (US);

Ahmed Sharkawy, Newark, DE (US);

Dennis W. Prather, Newark, DE (US);

Inventors:

Mathew Joseph Zablocki, Newark, DE (US);

Ahmed Sharkawy, Newark, DE (US);

Dennis W. Prather, Newark, DE (US);

Assignee:

Lumilant, Inc., Newark, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
Abstract

A transfer process for silicon nanomembranes (SiNM) may involve treating a recipient substrate with a polymer structural support. After treating the recipient substrate, a substrate containing the intended transferable devices may be brought in direct contact with the aforementioned polymer layer. The two substrates may then go through a Deep Reactive Ion Etch (DRIE) to remove at least a portion of the substrate containing the devices. Oxide may be selectively removed with a buffered oxide wet etch, leaving the transferred SiNM on the recipient substrate with the Underlying polymer layer.


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