The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2012

Filed:

May. 16, 2012
Applicants:

Joerg Berthold, Munich, DE;

Christian Pacha, Neukeferloh, DE;

Klaus Von Arnim, Munich, DE;

Inventors:

Joerg Berthold, Munich, DE;

Christian Pacha, Neukeferloh, DE;

Klaus von Arnim, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

One or more embodiments of the invention relate to a method comprising: treating a fin of a first n-channel access transistor in a static random access memory cell to have a lower charge carrier mobility than a fin of a first n-channel pull-down transistor in a first inverter in the memory cell, the first n-channel access transistor being coupled between a first bit line and a first node of the first inverter; and treating a fin of a second n-channel access transistor in the memory cell to have a lower charge carrier mobility than a fin of a second n-channel pull-down transistor in a second inverter in the memory cell, the second n-channel access transistor being coupled between a second bit line and a second node of the second inverter.


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