The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Jul. 22, 2010
Hoi Sing Kwok, Tiu Keng Leng, HK;
Man Wong, Sai Kung, HK;
Zhiguo Meng, Tian Jin, CN;
Shuyun Zhao, Kowloon, HK;
Chunya Wu, Mechanicsburg, PA (US);
Hoi Sing Kwok, Tiu Keng Leng, HK;
Man Wong, Sai Kung, HK;
Zhiguo Meng, Tian Jin, CN;
Shuyun Zhao, Kowloon, HK;
Chunya Wu, Mechanicsburg, PA (US);
Hong Kong University of Science and Technology, Clearwater Bay, Kowloon, Hong Kong, HK;
Abstract
The invention provides a method for forming thin film transistors including a polycrystalline semiconducting film. The method comprises depositing a first layer of amorphous semiconducting thin film on to a substrate; depositing a second layer of thin film on to the first layer of amorphous semiconducting thin film; patterning the second layer of thin film so that the first layer of amorphous semiconducting thin film is exposed at selected locations; exposing the first and second layers of thin film to a nickel containing compound in either a solution or a vapor phase ; removing the second layer of thin film; and annealing the first layer of amorphous semiconducting thin film at an elevated temperature so the first layer of amorphous semiconducting thin film converts into a polycrystalline semiconducting thin film.