Resistance-type random access memory device having three-dimensional bit line and word line patterning

Abstract

Provided is a resistance random access memory device and a method of fabricating, the same. The method includes forming a bit-line stack in which a plurality of local bit-lines are vertically stacked on a substrate, forming a word-line including a plurality of local word-lines that extend in a vertical direction toward a side of the bit-line stack and a connection line that extends in a horizontal direction to connect the plurality of local word-lines with one another, and forming a resistance memory thin film between the bit-line stack and the word-line. The present inventive concept can realize a highly dense memory array with 3D cross-point architecture by simplified processes.