The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Jun. 23, 2010
Katsuki Kusunoki, Ichihara, JP;
Katsuki Kusunoki, Ichihara, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
A compound semiconductor light-emitting device has a light-emitting layer, on a substrate, wherein at least a part of a substrate portion of the device side surface has recessed portions in a side direction of the device. A method of producing the compound semiconductor light-emitting device includes the steps of: (a) forming a compound semiconductor layer including a light-emitting layer of an n-type or p-type compound semiconductor on a wafer that serves as a substrate, (b) arranging a negative electrode and a positive electrode at predetermined positions for passing a drive current through the light-emitting layer, (c) forming a separation zone for separating the individual light-emitting devices, (d) perforating many small holes linearly in the wafer that serves as the substrate along the separation zone, and (e) dividing the wafer into individual light-emitting devices along the separation zone, whereby a rugged shape which is periodical in a side direction and is undulating in a plane or cross section, is formed on a substrate side surface of the light-emitting device.