The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Mar. 19, 2009
Takako Chinone, Tokyo, JP;
Shinichi Tanaka, Kanagawa, JP;
Sho Iwayama, Kanagawa, JP;
Yusuke Yokobayashi, Kanagawa, JP;
Satoshi Tanaka, Tokyo, JP;
Takako Chinone, Tokyo, JP;
Shinichi Tanaka, Kanagawa, JP;
Sho Iwayama, Kanagawa, JP;
Yusuke Yokobayashi, Kanagawa, JP;
Satoshi Tanaka, Tokyo, JP;
Stanley Electric Co., Ltd., Tokyo, JP;
Abstract
In a method for manufacturing a semiconductor device, a first conductivity type semiconductor layer and a second conductivity type semiconductor layer are sequentially grown on a growth substrate. Then, an electrode layer is formed on the second conductivity type semiconductor layer. Then, a support body is adhered to the electrode layer by providing at least one adhesive layer therebetween. Finally, at least a part of the growth substrate is removed. In this case, the adhesive layer is removable from the electrode layer.