The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
May. 24, 2010
Victor Nguyen, Novato, CA (US);
Yi Chen, Sunnyvale, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Isabelita Roflox, Union City, CA (US);
Li-qun Xia, Cupertino, CA (US);
Derek R Witty, Fremont, CA (US);
Victor Nguyen, Novato, CA (US);
Yi Chen, Sunnyvale, CA (US);
Mihaela Balseanu, Sunnyvale, CA (US);
Isabelita Roflox, Union City, CA (US);
Li-Qun Xia, Cupertino, CA (US);
Derek R Witty, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for processing a substrate with a boron rich film are provided. A patterned layer of boron rich material is deposited on a substrate and can be used as an etch stop. By varying the chemical composition, the selectivity and etch rate of the boron rich material can be optimized for different etch chemistries. The boron rich materials can be deposited over a layer stack substrate in multiple layers and etched in a pattern. The exposed layer stack can then be etched with multiple etch chemistries. Each of the boron rich layers can have a different chemical composition that is optimized for the multiple etch chemistries.