The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Aug. 25, 2010
Mansoor Barati, Toronto, CA;
Kingsley Kweku Larbi, Etobicoke, CA;
Raja Roy, Mississauga, CA;
Vaikuntam I. Lakshmanan, Mississauga, CA;
Ramamritham Sridhar, Mississauga, CA;
Mansoor Barati, Toronto, CA;
Kingsley Kweku Larbi, Etobicoke, CA;
Raja Roy, Mississauga, CA;
Vaikuntam I. Lakshmanan, Mississauga, CA;
Ramamritham Sridhar, Mississauga, CA;
Process Research Ortech Inc., Mississauga, Ontario, CA;
Abstract
A process to the production of silicon from amorphous silica is disclosed. The amorphous silica is formed from a material rich in silica, especially rice husk ash or silica fume. The process comprises subjecting the amorphous silica to leaching with a lixiviant of aqueous mineral acid, especially hydrochloric acid. Preferably, material rich in silica is roasted at a temperature of not more than 850° C., subjected to leaching and then subjected to a second roasting at a temperature of less than 750° C. The process provides for the production of high purity silicon, especially to the production of solar grade silicon (SoG-Si).