The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8336194 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 25, 2012

Filed:

Nov. 03, 2009
Applicants:

LU Yuan, Fremont, CA (US);

Jian X. Shen, Pleasanton, CA (US);

Geoffrey W. Anderson, Dublin, CA (US);

Christopher NG, Union City, CA (US);

Inventors:

Lu Yuan, Fremont, CA (US);

Jian X. Shen, Pleasanton, CA (US);

Geoffrey W. Anderson, Dublin, CA (US);

Christopher Ng, Union City, CA (US);

Assignee:

Western Digital (Fremont), LLC, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/127 (2006.01); H04R 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a tunneling magnetoresistance (TMR) reader is disclosed. A TMR structure comprising at least one ferromagnetic layer and at least one nonmagnetic insulating layer is provided. A first thermal annealing process on the TMR structure is performed. A reader pattern definition process performed on the TMR structure to obtain a patterned TMR reader. A second thermal annealing process is performed on the patterned TMR reader.


Find Patent Forward Citations

Loading…