The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2012

Filed:

Apr. 08, 2011
Applicants:

Barkat A. Wani, San Jose, CA (US);

Raul-adrian Cernea, Santa Clara, CA (US);

Inventors:

Barkat A. Wani, San Jose, CA (US);

Raul-Adrian Cernea, Santa Clara, CA (US);

Assignee:

SanDisk Technologies Inc., Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03M 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An on-chip DC voltage generator and hardware efficient method provide for generating linear DC voltages with a programmable negative temperature coefficient. A temperature-dependent DC voltage is digitally derived from an on-chip temperature readout, a programmable digital word to control the temperature coefficient and a programmable digital word to adjust the digital level. The digital result is applied to a resistor string digital to analog converter (DAC) to generate an analog DC voltage with a negative temperature slope. Additionally, another programmable digital word for trimming allows convergence at a given temperature of voltages having a common level but different temperature coefficients. These voltages can be applied to the word line in the flash memory and track the threshold voltage of the memory cell, which has a negative temperature coefficient, such that the difference between the gate voltage and the threshold voltage is constant over temperature.


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