The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2012
Filed:
Jun. 13, 2007
Salvatore Cascino, Gravina di Catania, IT;
Maria Concetta Nicotra, Catania, IT;
Antonello Santangelo, Belpasso, IT;
Salvatore Cascino, Gravina di Catania, IT;
Maria Concetta Nicotra, Catania, IT;
Antonello Santangelo, Belpasso, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
MOS device formed in a semiconductor body having a first conductivity type and a surface and housing a first current-conduction region and a second current-conduction region, of a second conductivity type. The first and second current-conduction regions define between them a channel, arranged below a gate region, formed on top of the surface and electrically insulated from the channel region. A conductive region extends on top of a portion of the channel, adjacent to and insulated from the gate region only on a side thereof facing the first current-conduction region. The conductive region is biased so as to modulate the current flowing in the channel.