The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2012
Filed:
Apr. 24, 2012
Robert Mulfinger, Dresden, DE;
Andy Wei, Dresden, DE;
Jan Hoentschel, Dresden, DE;
Casey Scott, Dresden, DE;
Robert Mulfinger, Dresden, DE;
Andy Wei, Dresden, DE;
Jan Hoentschel, Dresden, DE;
Casey Scott, Dresden, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
In sophisticated semiconductor devices, a strain-inducing semiconductor alloy may be positioned close to the channel region by forming cavities on the basis of a wet chemical etch process, which may have an anisotropic etch behavior with respect to different crystallographic orientations. In one embodiment, TMAH may be used which exhibits, in addition to the anisotropic etch behavior, a high etch selectivity with respect to silicon dioxide, thereby enabling extremely thin etch stop layers which additionally provide the possibility of further reducing the offset from the channel region while not unduly contributing to overall process variability.