The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2012
Filed:
Sep. 10, 2009
Applicants:
Joo-young Lee, Hwaseong-si, KR;
Ki-nam Kim, Seoul, KR;
Inventors:
Joo-Young Lee, Hwaseong-si, KR;
Ki-Nam Kim, Seoul, KR;
Assignee:
SAMSUNG Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device includes a semiconductor substrate having an active region and an isolation region. A gate structure is provided on the semiconductor device. First and second impurity regions are provided in the substrate on both sides of the gate structure. A pad electrode is provided to contact the first impurity region. Because the pad electrode is provided on the first impurity region of the semiconductor device, the contact plug does not directly contact the active region. Accordingly, failures caused by damage to the active region may be prevented.