The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2012
Filed:
Jun. 09, 2011
Donald J. Sawdai, Redondo Beach, CA (US);
Kwok K. Loi, Cerritos, CA (US);
Vesna Radisic, Manhattan Beach, CA (US);
Donald J. Sawdai, Redondo Beach, CA (US);
Kwok K. Loi, Cerritos, CA (US);
Vesna Radisic, Manhattan Beach, CA (US);
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Abstract
A unipolar diode with low turn-on voltage includes a subcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and a high-doped, narrow bandgap anode semiconductor layer. A junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode. A unipolar diode with low turn-on voltage includes an nsubcathode semiconductor layer, a low-doped, wide bandgap cathode semiconductor layer, and an nnarrow bandgap anode semiconductor layer. Again, a junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile