The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2012
Filed:
Mar. 14, 2008
Kyoung-bo Kim, Suwon-si, KR;
Kil-won Lee, Suwon-si, KR;
Jin-wook Seo, Suwon-si, KR;
Ki-yong Lee, Suwon-si, KR;
Moo-jin Kim, Suwon-si, KR;
Kyoung-Bo Kim, Suwon-si, KR;
Kil-Won Lee, Suwon-si, KR;
Jin-Wook Seo, Suwon-si, KR;
Ki-Yong Lee, Suwon-si, KR;
Moo-Jin Kim, Suwon-si, KR;
Samsung Display Co., Ltd., Yongin, KR;
Abstract
A thin film transistor and a method of fabricating the same include: a semiconductor layer having a grain boundary disposed in a crystal growth direction and having a variation in height of a top surface of 15 nm or less formed by a thin beam directional crystallization method. Also, an organic light emitting diode (OLED) display device comprising the thin film transistor is provided and has excellent characteristics fabricated by a simple process. Also, a flat panel display device and a method of fabricating the same are provided and include: a polycrystalline silicon layer in a pixel region; and a polycrystalline silicon layer in a peripheral region formed by the thin beam directional crystallization method. Also, a semiconductor device and a method of fabricating the same include: an intrinsic region of a semiconductor layer in the photodiode region formed by the thin beam directional crystallization method.